Energy Revolution: How Electricity Propagates in Graphene at the Speed of Light
Electrons Travel at the Speed of Light in Graphene
Physicists observed electrons moving between two layers of carbon as if they had no mass, in a manner analogous to light.
These naturally occurring carbon layers represent the thinnest form of graphite and are known as "bilayer graphene" or "Bernal bilayer graphene." This name honors the scientist John Desmond Bernal [1901-1971], who studied the crystalline structure of substances. In Bernal stacking (or AB stacking), a carbon atom in the top layer sits directly above the center of a hexagon in the bottom layer, unlike AA stacking, where the atoms of the two layers align directly on top of each other. This type of AB stacking occurs naturally in graphite.
It was precisely in this Bernal stack that Anna Seiler and her colleagues at the University of Göttingen, in Germany, recorded electrons moving like photons, or particles of light, which have no mass. In addition to moving much faster, the electrons in the bilayer graphene exhibit the same scattering behavior as photons.
The most significant aspect is that the team demonstrated that this relativistic current can be switched on and off, paving the way for the development of tiny, energy-efficient, and ultrafast transistors. This is not possible in ordinary, single-layer graphene, as it lacks an insulating phase – graphene is an exceptional conductor of electricity and cannot be “switched off” to represent a “0” value in a transistor (it is always “on,” representing “1”).
The anomalous movement of electrons is due to Dirac cones, similar to hourglasses, which describe the electronic configurations of certain materials at specific energy levels. [Image: Anna M. Seiler et al. – 10.1038/s41467-024-47342-0]
The discovery shows that bilayer graphene combines the best of both worlds: a structure that allows the incredibly fast movement of electrons, like light, while also exhibiting an insulating state. This insulating state can be achieved by applying an electric field perpendicular to the material.
This property of fast-moving electrons was predicted theoretically in 2009, but it took a long time to develop high-quality samples sufficient to measure the effect experimentally. This explains why it has been so difficult to take graphene from laboratory experiments to practical applications.
Although the experiments were conducted at cryogenic temperatures – around -273 °C – they demonstrate the potential of bilayer graphene to produce highly efficient transistors, enabling what the team calls "quantum electronics".
“Our work is a first step, but a crucial one. The next challenge for researchers will be to verify whether bilayer graphene can actually improve transistors or explore the potential of this effect in other areas of technology,” said Anna Seiler.
Bibliography:
Article: Probing the tunable multi-cone band structure in Bernal bilayer graphene
Authors: Anna M. Seiler, Nils Jacobsen, Martin Statz, Noelia Fernandez, Francesca Falorsi, Kenji Watanabe, Takashi Taniguchi, Zhiyu Dong, Leonid S. Levitov, R. Thomas Weitz
Magazine: Nature Communications
Vol.: 15, Article number: 3133
DOI: 10.1038/s41467-024-47342-0
Source: Edited from inovacaotecnologica.com
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